学历：
2003-2007 天津大学工学学士，光电子技术科学（天津大学南开大学合办专业）
2007-2009 香港中文大学哲学硕士，电子工程专业
2011-2015 香港中文大学哲学博士，电子工程专业
研究方向：
新型有机无机半导体材料的光伏、发光和光电探测器件的制备和表征；表面等离子体微纳结构在光电器件中的应用。
主讲课程：
纳米材料与器件前沿讲座（本科生课）
学术兼职：
担任Light: Science & Applications, Materials Today, Small, The Journal of Physical Chemistry Letters, Optics Express, Advanced Materials Interfaces, Small Structures等著名杂志审稿人
成果奖励：
暂无
课题项目：
基于半导体聚合物和胶体碲化汞量子点体异质结的室温下2微米以上波段高灵敏度红外探测器, 国家自然科学基金（青年）项目，2021.01?2023.12，主持
有机纳米混合材料全短波红外波段高灵敏度探测器，开元956棋app下载青年创新一般项目，2021.01?2022.12，主持
灵敏稳定的RP钙钛矿光电场效应管探测器及其系统性研究，开元956棋app下载2020年度校长基金，主持
有机/无机复合体异质结中电荷定域态的光谱特性研究，国家自然科学基金（青年）项目，2013.01?2015.12，参与
代表作：
1. Guo, B., Lai, R., Jiang, S., Zhou, L., Ren, Z., Lian, Y., Li, P., Cao, X., Xing, S., Wang, Y., Li, W., Zou, C., Chen, M., Hong, Z., Li, C., Zhao, B., Di, D. (2022): Ultrastable Near-Infrared Perovskite Light-Emitting Diodes, Nat. Photon., https://doi.org/10.1038/s41566-022-01046-3. IF:31.583.
2. Hu, B., Zhang, J., Guo, Z., Lu, L., Li, P., Chen, M.,* Li, C.* (2022): Manipulating Ion Migration and Interfacial Carrier Dynamics via Amino Acid Treatment in Planar Perovskite Solar Cells, ACS Appl. Mater. Interfaces, 14, 15840?15848. IF: 9.229.
3. Chen, M.,?* Lu, L.,? Yu, H., Li, C., Zhao, N.* (2021): Integration of Colloidal Quantum Dots with Photonic Structures for Optoelectronic and Optical Devices, Adv. Sci., 8, 2101560. *Corresponding authors; ?Equal Contribution. IF: 15.840.
4. Guo, Y., Apergi, S., Li, N., Chen, M., Yin, C., Yuan, Z., Gao, F., Xie, F., Brocks, G., Tao, S., Zhao, N. (2021): Phenylalkylammonium Passivation Enables Perovskite Light Emitting Diodes with Record High-radiance Operational Lifetime: The Chain Length Matters, Nat. Commun., 12, 644. IF: 12. 121.
5. Zhang, J., Li, C.,* Chen, M.,* Huang, K.* (2021): Real-time observation of ion migration in halide perovskite by photoluminescence imaging microscopy. J. Phys. D: Appl. Phys., 54, 044002. *Corresponding authors. IF: 3.169.
6. Dong, Y.,? Chen, M.,? Yiu, W. K., Zhu, Q., Zhou, G., Kershaw, S. V., Ke, N., Wong, C. P., Rogach, A. L., Zhao, N. (2020): Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature. Adv. Sci., 7, 2000068. ?Equal Contribution. IF: 15.840.
7. Zhu, B., Chen, M.,* Zhu, Q., Zhou, G., Abdelazim, N. M., Zhou, W., Kershaw, S. V., Rogach, A. L., Zhao, N.* and Tsang, H. K.* (2019): Integrated Plasmonic Infrared Photodetector Based on Colloidal HgTe Quantum Dots. Adv. Mater. Technol. 4, 1900354. *Corresponding authors. IF: 5.395.
8. Chen, M., Lu, H., Abdelazim, N. M., Zhu, Y., Wang, Z., Ren, W., Kershaw, S. V., Rogach, A. L. and Zhao, N. (2017): Mercury Telluride Quantum Dot Based Phototransistors Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm. ACS Nano 11, 5614?5622. IF: 13.903.
9. Chen, M., Shao, L., Kershaw, S. V., Yu, H., Wang, J., Rogach, A. L. and Zhao, N. (2014): Photocurrent Enhancement of HgTe Quantum Dot Photodiodes by Plasmonic Gold Nanorod structures. ACS Nano 8, 8208?8216. IF: 13.903.
10. Chen, M., Yu, H., Kershaw, S. V., Xu, H., Gupta, S., Hetsch, F., Rogach, A. L. and Zhao, N. (2014): Fast, Air-Stable Infrared Photodetectors based on Spray-Deposited Aqueous HgTe Quantum Dots. Adv. Funct. Mater. 24, 53?59. IF: 15.621.
11. Zhu, B., Chen, M., Kershaw, S. V., Rogach, A. L., Zhao, N., Tsang, H. K. (2018): Polarization Sensitive Plasmonic Photodetector Based on HgTe Quantum Dots. IEEE Photonics Conference, Reston, VA, USA, September 2018, DOI: 10.1109/IPCon.2018.8527202.
12. Zhu, B.,? Chen, M.,? Kershaw, S. V., Rogach, A. L., Zhao, N., Tsang, H. K. (2017): Integrated Near-Infrared Photodetector Based on Colloidal HgTe Quantum Dot Loaded Plasmonic Waveguide. IEEE Conference on Lasers and Electro-Optics Pacific Rim, Singapore, August 2017, DOI: 10.1109/CLEOPR.2017.8118904. ?Equal Contribution.
13. Chen, M., Zhang, Z., and Chan, K. T. (2009): Dual-Band Polarization-Insensitive Left-Handed Metamaterial in Terahertz Range. IEEE OptoElectronics and Communications Conference, Hong Kong, July 2009, DOI:10.1109/OECC.2009.5218118.
