学历:
2011-2015福州大学理学学士,微电子学专业
2015-2021厦门大学工学博士,电子科学与技术专业
2019-2020 东京大学物性研究所联合培养博士,电子科学与技术专业
研究方向:
宽禁带半导体材料与器件、集成无源器件、微纳制造工艺
主讲课程:
半导体物理与器件工艺基。こ搪桌恚ū究粕危
专业英语(研究生课)
成果奖励:
福建省自然科学奖三等奖(2021)
博士研究生国家奖学金(2020)
课题项目:
GaN基紫外VCSEL关键技术研究,国家自然科学基(重点)项目,2023-2027,在研,参与
北方华创,MEMS AlN PVD工艺开发,企业横向项目,2021-2022,结题,参与
GaN基垂直腔面发射激光器基础研究,国家自然科学基金(重点)项目,2016-2018 ,结题,参与
代表作:
[1] S. C. Wu, R. B. Xu*, L. Guo, Y. G. Ma, D. Q. Yu*. Influence of growth parameters and systematical analysis on 8-inch piezoelectric AlN thin films by magnetron sputtering[J]. Materials Science in Semiconductor Processing, 2024, 169: 107895.
[2] R. B. Xu, H. Akiyama, B. P. Zhang*. Impacts of SiO2-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers[J]. IEEE Transactions on Electron Devices, 2023, 70(11): 5701-5705.
[3] R. B. Xu, Y. Mei, H. Xu, T. R. Yang, L. L. Ying, Z. W. Zheng, H. Long, B. P. Zhang, J. P. Liu. Effects of lateral optical confinement in GaN VCSELs with double dielectric DBRs[J]. IEEE Photonics Journal, 2020,12(99): 1-8.
[4] R. B. Xu, H. Xu, Y. Mei, X. L. Shi, L. Y. Ying, Z. W. Zheng, H. Long, Z. R. Qiu, B. P. Zhang, J. P. Liu. Emission dynamics of GaN-based blue resonant-cavity light-emitting diodes[J]. Journal of Luminescence, 2019, 216: 116717.
[5] R. B. Xu, Y. Mei, H. Xu, L. Y. Ying, Z. W. Zheng, H. Long, D. Zhang, B. P. Zhang, J. P. Liu. Green Vertical-Cavity Surface-Emitting Lasers Based on Combination of Blue-Emitting Quantum Wells and Cavity-Enhanced Recombination[J]. IEEE Transactions on Electron Devices, 2018, 65(10): 4401-4406.
[6] R. B. Xu, Y. Mei, B. P. Zhang, L. L. Ying, Z. W. Zheng, W. Hofmann, J. P. Liu, H. Yang, M. Li, J. Zhang. Simultaneous blue and green lasing of GaN-based vertical-cavity surface-emitting lasers[J]. Semiconductor Science and Technology, 2017, 32(10): 105012.